? 1/6 table 1: main product characteristics i f(av) 2 x 40 a v rrm 170 v t j 175 c v f (max) 0.74 v STPS80170C high voltage power schottky rectifier rev. 1 k a1 a2 a1 k a2 to-247 STPS80170Cw september 2005 features and benefits high junction temperature capability low leakage current good trade off between leakage current and forward voltage drop low thermal resistance high frequency operation avalanche specification description dual center tab schottky rectifier suited for high frequency switched mode power supplies. packaged in to-247, this device is intended for use to enhance the reliability of the application. table 2: order code part number marking STPS80170Cw STPS80170Cw table 3: absolute ratings (limiting values, per diode) symbol parameter value unit v rrm repetitive peak reverse voltage 170 v i f(rms) rms forward current 80 a i f(av) average forward current t c = 150 c = 0.5 per diode per device 40 80 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 500 a p arm repetitive peak avalanche power t p = 1 s t j = 25 c 38200 w t stg storage temperature range -65 to + 175 c t j maximum operating junction temperature * 175 c dv/dt critical rate of rise of reverse voltage 10000 v/s * : thermal runaway condition for a diode on its own heatsink d ptot dtj - -------------- 1 rth j a ? () ------------------------- - <
STPS80170C 2/6 table 4: thermal parameters table 5: static electrical characteristics (per diode) pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% to evaluate the conduction losses use the following equation: p = 0.62 x i f(av) + 0.003 i f 2 (rms) symbol parameter value unit r th(j-c) junction to case per diode total 0.7 0.5 c/w r th(c) coupling 0.3 when the diodes 1 and 2 are used simultaneously: ? tj(diode 1) = p(diode 1) x r th(j-c) (per diode) + p(diode 2) x r th(c) symbol parameter tests conditions min. typ max. unit i r * reverse leakage current t j = 25 c v r = v rrm 80 a t j = 125 c 20 80 ma v f ** forward voltage drop t j = 25 c i f = 40 a 0.80 0.84 v t j = 125 c 0.68 0.74 t j = 25 c i f = 80 a 0.90 0.96 t j = 125 c 0.80 0.86
STPS80170C 3/6 figure 1: average forward power dissipation versus average forward current (per diode) figure 2: average forward current versus ambient temperature ( = 0.5, per diode) figure 3: normalized avalanche power derating versus pulse duration figure 4: normalized avalanche power derating versus junction temperature figure 5: non repetitive surge peak forward current versus overload duration (maximum values, per diode) figure 6: relative variation of thermal impedance junction to case versus pulse duration 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 p f(av) (w) =0.05 =0.1 =0.2 =0.5 =1 t =t /t p t p i f(av) (a) 0 5 10 15 20 25 30 35 40 45 0 25 50 75 100 125 150 175 i f(av) (a) r th(j-a) =15c/w t =t /t p t p r th(j-a) =r th(j-c) t amb (c) 0.001 0.01 0.1 0.01 1 0.1 10 100 1000 1 t (s) p p(t) p (1s) arm p arm 0 0.2 0.4 0.6 0.8 1 1.2 25 50 75 100 125 150 t (c) j p(t) p (25c) arm p arm 0 50 100 150 200 250 300 350 400 450 500 1.e-03 1.e-02 1.e-01 1.e+00 i m (a) t c =50c t c =75c t c =125c i m t =0.5 t(s) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-03 1.e-02 1.e-01 1.e+00 z th(j-c) /r th(j-c) =0.1 =0.2 =0.5 single pulse t =t /t p t p t p (s)
STPS80170C 4/6 figure 7: reverse leakage current versus reverse voltage applied (typical values, per diode) figure 8: junction capacitance versus reverse voltage applied (typical values, per diode) figure 9: forward voltage drop versus forward current (per diode, low level) figure 10: forward voltage drop versus forward current (per diode, high level) 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 1.e+06 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 17 0 i r (a) t j =150c t j =125c t j =25c t j =100c t j =75c t j =50c v r (v) c( pf ) 100 1000 10000 1 10 100 1000 f=1mhz v osc =30mv rms t j =25c v r (v) i fm (a) v fm (v) 0 5 10 15 20 25 30 35 40 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) 1 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 tj=25c (maximum values) tj=125c (maximum values) tj=125c (maximum values) tj=125c (typical values) tj=125c (typical values) i fm (a) v fm (v)
STPS80170C 5/6 figure 11: to-247 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. h l2 l5 l l4 d e m l1 l3 f2 f3 f4 f1 v2 f(x3) g a v v dia table 6: ordering information epoxy meets ul94, v0 cooling method: by conduction (c) recommended torque value: 0.8 nm. maximum torque value: 1.0 nm. ordering type marking package weight base qty delivery mode STPS80170Cw STPS80170Cw to-247 4.4 g 30 tube table 7: revision history date revision description of changes 16-sep-2005 1 first issue. ref. dimensions millimeters inches min. typ. max. min. typ. max. a 4.85 5.15 0.191 0.203 d 2.20 2.60 0.086 0.102 e 0.40 0.80 0.015 0.031 f 1.00 1.40 0.039 0.055 f1 3.00 0.118 f2 2.00 0.078 f3 2.00 2.40 0.078 0.094 f4 3.00 3.40 0.118 0.133 g 10.90 0.429 h 15.45 15.75 0.608 0.620 l 19.85 20.15 0.781 0.793 l1 3.70 4.30 0.145 0.169 l2 18.50 0.728 l3 14.20 14.80 0.559 0.582 l4 34.60 1.362 l5 5.50 0.216 m 2.00 3.00 0.078 0.118 v5 5 v2 60 60 dia. 3.55 3.65 0.139 0.143
STPS80170C 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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